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PD 91449B
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 www..com kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220AB package
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 6.5A
n-cha nn el
Benefits
* Generation -4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 13 6.5 52 52 7.0 52 20 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-------------------------
Typ.
----------0.50 ----2 (0.07)
Max.
2.1 3.5 -----80 ------
Units
C/W
g (oz)
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3/21/2000
IRG4BC20UD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance T 1.4 ICES Zero Gate Voltage Collector Current ------VFM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.69 ---- V/C 1.85 2.1 2.27 ---V 1.87 ------- 6.0 -11 ---- mV/C 4.3 ---S ---- 250 A ---- 1700 1.4 1.7 V 1.3 1.6 ---- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 6.5A VGE = 15V IC = 13A See Fig. 2, 5 IC = 6.5A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 6.5A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 8.0A See Fig. 13 IC = 8.0A, TJ = 150C VGE = 20V
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Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. Max. Units Conditions 27 41 IC = 6.5A 4.5 6.8 nC VCC = 400V See Fig. 8 10 16 VGE = 15V 39 ---TJ = 25C 15 ---ns IC = 6.5A, VCC = 480V 93 140 VGE = 15V, RG = 50 110 170 Energy losses include "tail" and 0.16 ---diode reverse recovery. 0.13 ---mJ See Fig. 9, 10, 11, 18 0.29 0.3 38 ---TJ = 150C, See Fig. 9, 10, 11, 18 17 ---ns IC = 6.5A, VCC = 480V 100 ---VGE = 15V, RG = 50 220 ---Energy losses include "tail" and 0.49 ---mJ diode reverse recovery. 7.5 ---nH Measured 5mm from package 530 ---VGE = 0V 39 ---pF VCC = 30V See Fig. 7 7.4 --- = 1.0MHz 37 55 ns TJ = 25C See Fig. 55 90 TJ = 125C 14 IF = 8.0A 3.5 5.0 A TJ = 25C See Fig. 4.5 8.0 TJ = 125C 15 VR = 200V 65 138 nC TJ = 25C See Fig. 124 360 TJ = 125C 16 di/dt 200A/s 240 ---A/s TJ = 25C See Fig. 210 ---TJ = 125C 17
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IRG4BC20UD
12
D u ty c y c le : 5 0 % T J = 1 2 5 C T s in k = 9 0 C G a te d riv e a s s p e c ifie d T u rn -o n los s e s in c lu d e e ffe c ts o f re v e rs e r e c o v e ry P ow er Diss ip ation = 13W
10
L oa d C u rre n t (A )
8
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6
6 0% o f ra te d v oltag e
4
2
0 0.1 1 10
A
100
f, F re q u e n c y (k H z )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
T J = 25C T J = 150C
10
I C , C ollec tor-to-E m itte r C u rre nt (A )
I C , Collector-to-Emitter Current (A)
10
TJ = 1 5 0C
TJ = 25 C
1
1
0.1 0.1 1
V G E = 15V 20s PULSE WIDTH
10
0.1 4 6 8
V C C = 10 V 5 s P U L S E W IDTH
10
A
12
VC E , Collector-to-Emitter Voltage (V)
VG E , Ga te -to-Em itter Volta ge (V)
Fig. 2 - Typical Output Characteristics www.irf.com
A
Fig. 3 - Typical Transfer Characteristics 3
IRG4BC20UD
14
M aximum D C Collector Current (A )
12
V C E , C ollector-to-E m itter V oltag e (V)
V G E = 15 V
2.6
V G E = 1 5V 8 0 s P U L S E W ID TH I C = 1 3A
2.2
10
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8
1.8
I C = 6 .5A
6
4
1.4
I C = 3.3 A
2
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 100 120
A
140 160
T C , C ase Tem perature (C)
T J , J u n c tio n Te m p e ra tu re (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Therm al Response (Z thJ C )
1
D = 0.50
0 .2 0 0 .10 0.0 5
PD M
0 .1
0.0 2 0 .01
t
SIN G LE P U LS E (T H ER M AL R E SP O N SE )
N o te s : 1 . D u ty fa c to r D = t 1 /t 2
1 t2
0 .0 1 0 .0 0 0 0 1
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R ectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
IRG4BC20UD
1000
V G E , G a te -to -E m itte r V o lta g e (V )
A
C, Ca pac itanc e (p F)
800
V GE = C ie s = C re s = C oes =
0V , f = 1M H z C g e + C g c , C ce S H O R TE D C gc C ce + C g c
20
VCE = 400V I C = 6 .5 A
16
C ie s
600
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12
C oes
400
8
200
C re s
4
0 1 10
0 0 5 10 15 20 25
A
30
100
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
Q g , T o ta l G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.32
Total Switching Losses (m J)
0.31
Total S witching Los se s (m J)
V CC VGE TJ IC
= 480V = 15V = 25 C = 6 .5A
10
R G = 50 V GE = 15V V CC = 4 8 0 V
IC = 1 3 A
1
I C = 6 .5 A
0.30
I C = 3 .3 A
0.29 0 10 20 30 40 50
A
60
0.1 -60 -40 -20 0 20 40 60 80 100 120 140
A 160
R G , G a te R e sista n c e ( )
TJ , J u n ctio n T e m p e ra tu re (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature 5
IRG4BC20UD
1.2 0.9
I C , C ollecto r-to -Em itter Cu rrent (A)
Total Switc hing Losses (mJ )
RG TJ V CC V GE
= 50 = 1 5 0 C = 480V = 15V
1000
VG E E 2 0V G= T J = 12 5 C
100
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S A FE O P E R A TIN G A R E A
10
0.6
0.3
1
0.0 0 2 4 6 8 10 12
A 14
0 .1 1 10 100 1000
I C , C o lle cto r-to -E m itte r C u rre n t (A )
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
10
TJ = 1 50 C TJ = 1 25 C TJ = 25 C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
IRG4BC20UD
100 100
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
80
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
IF = 16 A
t rr - (ns)
60
I F = 8 .0A
I IR R M - (A )
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I F = 1 6A
10
40
IF = 8 .0 A I F = 4.0 A
I F = 4 .0 A
20
0 100
d i f /d t - (A / s)
1000
1 100
1000
di f /dt - (A /s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
400
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
300
di(rec)M/dt - (A / s)
Q R R - (nC )
I F = 16 A
200
I F = 4 .0A
1000
I F = 8.0 A I F = 16 A
I F = 8 .0A
100
IF = 4.0 A
0 100 100 100
di f /dt - (A /s)
1000
1000
di f /dt - (A /s)
Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com
Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7
IRG4BC20UD
90% Vge +Vge
Same ty pe device as D .U.T.
Vce
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Ic 80% of Vce 430F D .U .T. td (o ff) tf 10% Vce Ic
9 0 % Ic 5 % Ic
Eoff =
t1 + 5 S V c e ic d t t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id d t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t1
t4 V d id d t t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC20UD
V g G A T E S IG N A L D E V IC E U N D E R T E S T
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C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000 F 100 V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4BC20UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.
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Case Outline TO-220AB
1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 )
2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 )
3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN
-B -
4.69 (.185) 4.20 (.165)
1.32 (.052) 1.22 (.048)
4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3
N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B .
3X
1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 )
3.96 (.160) 3.55 (.140)
LEAD 1234-
A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R
4.06 (.160 ) 3.55 (.140 )
0.93 (.037) 0.69 (.027)
MBAM
1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X
3X
3X
0.55 (.022) 0.46 (.018)
0 .3 6 (.01 4 )
2.92 (.115) 2.64 (.104)
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim e ters a nd (In c he s )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00
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